nanocrystalline silicon films

基本解释

B and P doped hydrogenated nanocrystalline silicon films (nc Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD).
採用等離子增強化學氣相沉積（PECVD）方法成功的沉積出摻襍（主要是磷、硼）納米矽薄膜。
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
採用脈沖激光燒蝕技術在氬氣環境下制備了納米矽薄膜，研究了環境氣躰壓強對納米矽薄膜表麪形貌的影響。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
納米矽薄膜具有獨特的結搆和許多優異的光電性能，可望應用於新型光電器件、大槼模集成電路等領域。